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 ST380CPbF Series
Vishay High Power Products
Phase Control Thyristors (Hockey PUK Version), 960 A
FEATURES
* Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AB (E-PUK) * Low profile hockey PUK current-carrying capability * Lead (Pb)-free
TO-200AB (E-PUK)
RoHS
COMPLIANT
to
increase
* Designed and qualified for industrial level
PRODUCT SUMMARY
IT(AV) 960 A
TYPICAL APPLICATIONS
* DC motor controls * Controlled DC power supplies * AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 960 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz 55 1900 25 15 000 15 700 1130 1030 400/600 100 - 40 to 125 UNITS A C A C A
kA2s V s C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 06 VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 400 600 500 700 50
ST380C..C
Document Number: 94410 Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
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ST380CPbF Series
Vishay High Power Products
Phase Control Thyristors (Hockey PUK Version), 960 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 960 (440) 55 (75) 1900 15 000 15 700 12 600 Sinusoidal half wave, initial TJ = TJ maximum 13 200 1130 1030 800 725 11 300 0.85 0.88 0.25 0.24 1.60 600 1000 kA2s V kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load
m V mA
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 100 UNITS A/s
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94410 Revision: 11-Aug-08
ST380CPbF Series
Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 960 A
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS
10.0 2.0 3.0 20 5.0 200 3.0 -
W A V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.09 0.04 0.02 0.01 9800 (1000) 83 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C
Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style
RthC-hs
TO-200AB (E-PUK)
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE 0.010 0.012 0.015 0.022 0.036 0.011 0.012 0.015 0.022 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.007 0.012 0.016 0.023 0.036 DOUBLE SIDE 0.007 0.013 0.017 0.023 0.037 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 94410 Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
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ST380CPbF Series
Vishay High Power Products
Phase Control Thyristors (Hockey PUK Version), 960 A
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 400 800 1200 30 60 90 120 180 DC 1600 2000
Conduction Period
Maximum Allowable Heats T ink emperature (C)
130 120 110 100 90 80 70 60 50 40 0 100 200
S 380C..C S T eries (S ingle S Cooled) ide RthJ-hs(DC) = 0.09 K/ W
S 380C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.04 K/ W
Conduction Angle
30
60 90 120 180
300
400
500 600
700
Average On-state Current (A)
Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (C)
Fig. 4 - Current Ratings Characteristics
120 110 100 90 80 70 60 50 40 30 20 0 200 30
S 380C..C S T eries (S ingle S Cooled) ide RthJ-hs(DC) = 0.09 K/ W
Maximum Average On-s tate Power Loss (W)
130
2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) S 380C..C S T eries T = 125C J
Conduction Angle
180 120 90 60 30
RMS Limit
Conduction Period
60 90 120 180 400 600 800 DC 1000 1200
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 200 30
Maximum Average On-state Power Loss (W)
S 380C..C S T eries (Double S Cooled) ide R thJ-hs(DC) = 0.04 K/ W
2800 2400 2000 1600 RMSLimit 1200 800 400 0 0 400 800 1200 1600 2000 Average On-state Current (A)
Conduction Period
DC 180 120 90 60 30
Conduction Angle
60 90 120 180
S 380C..C S T eries T = 125C J
400 600
800 1000 1200 1400
Average On-s tate Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94410 Revision: 11-Aug-08
ST380CPbF Series
Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 960 A
Peak Half S Wave On-state Current (A) ine
14000
Peak Half S Wave On-state Current (A) ine
At Any Rated Load Condition And With Rated V RRM Applied Following S urge. 13000 Initial T = 125C J @60 Hz 0.0083 s 12000 @50 Hz 0.0100 s 11000 10000 9000 8000 T eries 7000 S 380C..C S 6000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
15000 14000
Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control Of Conduc tion May Not Be Maintained. Initial T = 125C 13000 J No Voltage R eapplied 12000 Rated VRRM R eapplied 11000 10000 9000 8000 7000 S 380C..C S T eries 0.1 Pulse T rain Duration (s) 1
6000 0.01
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
10000 Ins tantaneous On-state Current (A) T = 25C J TJ= 125C
1000
S 380C..C S T eries
100 0.5
1
1.5
2
2.5
3
3.5
Ins tantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
T ransient T hermal Impedance Z thJ-hs (K/ W)
0.1
S 380C..C S T eries
0.01
S teady S tate Value R thJ-hs = 0.09 K/ W (S ingle S ide Cooled) R thJ-hs = 0.04 K/ W (Double S Cooled) ide (DC Operation)
0.001 0.001
0.01
0.1 S quare Wave Pulse Duration (s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94410 Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 5
ST380CPbF Series
Vishay High Power Products
Phase Control Thyristors (Hockey PUK Version), 960 A
100 Instantaneous Gate Voltage (V)
R ectangular gate pulse a) R ecommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp tp tp tp
= 4ms = 2ms = 1ms = 0.66ms
T j=25 C
T j=125 C
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 380C..C S T eries 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
1
1 2 3 4 5 6 7
38
2 -
0
3
C
4
06
5
C
6
1
7
8
PbF
9
Thyristor Essential part number 0 = Converter grade C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AB (E-PUK) 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8
9
-
Critical dV/dt: Lead (Pb)-free
None = 500 V/s (standard selection) L = 1000 V/s (special selection)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94410 Revision: 11-Aug-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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